@article{kaewmeechai2025frenkel,title={Hole trapping facilitates the formation of {Frenkel} pairs in crystalline and amorphous {Ga$_2$O$_3$} films},author={Kaewmeechai, Chaiyawat and Strand, Jack and Shluger, Alexander L.},journal={Physical Review B},volume={112},number={20},pages={205203},year={2025},month=nov,publisher={American Physical Society},doi={10.1103/jmq5-9yy9},}
PRB
Electronic structure and properties of trapped holes in crystalline and amorphous Ga_2O_3
Chaiyawat Kaewmeechai, Jack Strand, and Alexander L. Shluger
Amorphous Ga_2O_3 is a low-temperature-synthesizable phase used in photodetectors and resistive switching memories. We investigate self-trapped hole formation across crystalline and amorphous phases and show that holes localise on precursor O sites to form polarons, whereas electrons remain delocalised.
@article{kaewmeechai2025holes,title={Electronic structure and properties of trapped holes in crystalline and amorphous {Ga$_2$O$_3$}},author={Kaewmeechai, Chaiyawat and Strand, Jack and Shluger, Alexander L.},journal={Physical Review B},volume={111},number={3},pages={035203},year={2025},month=jan,publisher={American Physical Society},doi={10.1103/PhysRevB.111.035203},}
pssb
Structure and migration mechanisms of oxygen interstitial defects in β-Ga_2O_3
Chaiyawat Kaewmeechai, Jack Strand, and Alexander L. Shluger
@article{kaewmeechai2025interstitials,title={Structure and migration mechanisms of oxygen interstitial defects in {$\beta$-Ga$_2$O$_3$}},author={Kaewmeechai, Chaiyawat and Strand, Jack and Shluger, Alexander L.},journal={Physica Status Solidi (b)},volume={263},number={1},pages={e202400652},year={2025},month=feb,publisher={Wiley-VCH},doi={10.1002/pssb.202400652},}
2024
PRM
Role of local structure in the optical and electronic properties of oxygen vacancies in different crystal phases of Ga_2O_3
Chaiyawat Kaewmeechai, Jack Strand, and Alexander L. Shluger
Local structure around O vacancies in α-, β- and ε-Ga_2O_3 controls their charge transition levels and optical absorption. Vacancies surrounded by tetrahedrally coordinated Ga exhibit deeper CTLs and higher absorption energies than octahedral environments.
@article{kaewmeechai2024vacancies,title={Role of local structure in the optical and electronic properties of oxygen vacancies in different crystal phases of {Ga$_2$O$_3$}},author={Kaewmeechai, Chaiyawat and Strand, Jack and Shluger, Alexander L.},journal={Physical Review Materials},volume={8},number={9},pages={094603},year={2024},publisher={American Physical Society},doi={10.1103/PhysRevMaterials.8.094603},}
2022
RinP
Band alignment of Cs_2BX_6 double halide perovskites and TiO_2 using electron affinity rule
Chaiyawat Kaewmeechai, Yongyut Laosiritaworn, and Atchara Punya Jaroenjittichai
@article{kaewmeechai2022bandalign,title={Band alignment of {Cs$_2$BX$_6$} double halide perovskites and {TiO$_2$} using electron affinity rule},author={Kaewmeechai, Chaiyawat and Laosiritaworn, Yongyut and Jaroenjittichai, Atchara Punya},journal={Results in Physics},volume={42},pages={106015},year={2022},publisher={Elsevier},doi={10.1016/j.rinp.2022.106015},}
2021
RinP
First-principles study on structural stability and reaction with H_2O and O_2 of vacancy-ordered double perovskite halides: Cs_2(Ti, Zr, Hf)X_6
Chaiyawat Kaewmeechai, Yongyut Laosiritaworn, and Atchara Punya Jaroenjittichai
@article{kaewmeechai2021perovskite,title={First-principles study on structural stability and reaction with {H$_2$O} and {O$_2$} of vacancy-ordered double perovskite halides: {Cs$_2$(Ti, Zr, Hf)X$_6$}},author={Kaewmeechai, Chaiyawat and Laosiritaworn, Yongyut and Jaroenjittichai, Atchara Punya},journal={Results in Physics},volume={25},pages={104225},year={2021},publisher={Elsevier},doi={10.1016/j.rinp.2021.104225},}
RinP
DFT calculation on electronic properties of vacancy-ordered double perovskites Cs_2(Ti, Zr, Hf)X_6 and their alloys: Potential as light absorbers in solar cells
Chaiyawat Kaewmeechai, Yongyut Laosiritaworn, and Atchara Punya Jaroenjittichai
@article{kaewmeechai2021dftperovskite,title={{DFT} calculation on electronic properties of vacancy-ordered double perovskites {Cs$_2$(Ti, Zr, Hf)X$_6$} and their alloys: Potential as light absorbers in solar cells},author={Kaewmeechai, Chaiyawat and Laosiritaworn, Yongyut and Jaroenjittichai, Atchara Punya},journal={Results in Physics},volume={30},pages={104875},year={2021},publisher={Elsevier},doi={10.1016/j.rinp.2021.104875},}
2020
JPCM
Hybrid functional investigation of band offsets for non-polar, Ga-polar and Al-polar interfaces in GaN/AlN heterojunction
Chaiyawat Kaewmeechai, Yongyut Laosiritaworn, and Atchara Punya Jaroenjittichai
@article{kaewmeechai2020ganaln,title={Hybrid functional investigation of band offsets for non-polar, {Ga}-polar and {Al}-polar interfaces in {GaN/AlN} heterojunction},author={Kaewmeechai, Chaiyawat and Laosiritaworn, Yongyut and Jaroenjittichai, Atchara Punya},journal={Journal of Physics: Condensed Matter},volume={33},number={3},pages={035005},year={2020},publisher={IOP Publishing},doi={10.1088/1361-648X/abbb55},}
ASS
DFT band alignment of polar and nonpolar GaN/MgGeN_2, ZnO/MgGeN_2 and GaN/ZnO heterostructures for optoelectronic device design
Chaiyawat Kaewmeechai, Yongyut Laosiritaworn, and Atchara Punya Jaroenjittichai
@article{kaewmeechai2020heterostruct,title={{DFT} band alignment of polar and nonpolar {GaN/MgGeN$_2$}, {ZnO/MgGeN$_2$} and {GaN/ZnO} heterostructures for optoelectronic device design},author={Kaewmeechai, Chaiyawat and Laosiritaworn, Yongyut and Jaroenjittichai, Atchara Punya},journal={Applied Surface Science},volume={533},pages={147503},year={2020},publisher={Elsevier},doi={10.1016/j.apsusc.2020.147503},}